Multiple-Step Electron Charging in Si Quantum-Dot Floating Gate nMOSFETs

Mitsuhisa Ikeda; Yusuke Shimizu; Taku Shibaguchi; Hideki Murakami; Seiichi Miyazaki

doi:https://doi.org/10.7567/SSDM.2003.E-9-1

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[E-9-1] Multiple-Step Electron Charging in Si Quantum-Dot Floating Gate nMOSFETs

Mitsuhisa Ikeda、Yusuke Shimizu、Taku Shibaguchi、Hideki Murakami、Seiichi Miyazaki (1.Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University)

https://doi.org/10.7567/SSDM.2003.E-9-1

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