[F-1-4] High fmax 0.1μm Γ-gate InGaAs/InAlAs/GaAs Metamorphic HEMT

Bok Hyung Lee、Byeong Ok Lim、Mi Ra Kim、Sam Dong Kim、Jin Koo Rhee、Hyung Sup Yoon (1.Millimeter-wave INnovation Technology research center(MINT), Dongguk University、2.Wireless Communication Devices Department, Basic Research Laboratory, Electronics and Telecommunications Research Institute)

https://doi.org/10.7567/SSDM.2003.F-1-4