Reduction of Turn-on Voltage in GaInNAs and InGaAs Base Double Heterojunction Bipolar Transistors

Cheng-Hsien Wu; Yan-Kuin Su; Shang-Chin Wei; Shoou-Jinn Chang

doi:https://doi.org/10.7567/SSDM.2003.F-1-5

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[F-1-5] Reduction of Turn-on Voltage in GaInNAs and InGaAs Base Double Heterojunction Bipolar Transistors

Cheng-Hsien Wu, Yan-Kuin Su, Shang-Chin Wei, Shoou-Jinn Chang (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University)

https://doi.org/10.7567/SSDM.2003.F-1-5

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