Reduction of Turn-on Voltage in GaInNAs and InGaAs Base Double Heterojunction Bipolar Transistors

Cheng-Hsien Wu; Yan-Kuin Su; Shang-Chin Wei; Shoou-Jinn Chang

doi:https://doi.org/10.7567/SSDM.2003.F-1-5

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[F-1-5] Reduction of Turn-on Voltage in GaInNAs and InGaAs Base Double Heterojunction Bipolar Transistors

Cheng-Hsien Wu、Yan-Kuin Su、Shang-Chin Wei、Shoou-Jinn Chang (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University)

https://doi.org/10.7567/SSDM.2003.F-1-5

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