Extrinsic Base Regrowth of p-InGaN for Npn-type GaN/InGaN Heterojunction Bipolar Transistor

Toshiki Makimoto; Kazuhide Kumakura; Naoki Kobayashi

doi:https://doi.org/10.7567/SSDM.2003.F-2-2

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[F-2-2] Extrinsic Base Regrowth of p-InGaN for Npn-type GaN/InGaN Heterojunction Bipolar Transistor

Toshiki Makimoto、Kazuhide Kumakura、Naoki Kobayashi (1.NTT Basic Research Laboratories, NTT Corporation、2.The University of Electro-Communications, Dept. of Applied Physics and Chemistry)

https://doi.org/10.7567/SSDM.2003.F-2-2

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