The Japan Society of Applied Physics

[F-2-4] The improvement of DC performance in AlGaN/GaN HFET with isoelectronic Al doped channel

Chang Min Jeon、Jae-Hoon Lee、Jung-Hee Lee、Jong-Lam Lee (1.Dept. of Materials Science & Engineering, Pohang University of Science and Technology (POSTECH)、2.School of Electronic Engineering & Computer Science, Kyungpook National University)

https://doi.org/10.7567/SSDM.2003.F-2-4