Low damage, high selectivity Ar/Cl2/CH4/O2 gate recess etching for AlGaN/GaN HEMT fabrication

Wen-Kai Wang; Yu-Jen Li; Cheng-Kuo Lin; Yi-Jen Chan; Guan-Ting Chen; Jen- Inn Chyi

doi:https://doi.org/10.7567/SSDM.2003.F-2-6

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[F-2-6] Low damage, high selectivity Ar/Cl2/CH4/O2 gate recess etching for AlGaN/GaN HEMT fabrication

Wen-Kai Wang, Yu-Jen Li, Cheng-Kuo Lin, Yi-Jen Chan, Guan-Ting Chen, Jen- Inn Chyi (1.Department of Electrical Engineering, National Central University)

https://doi.org/10.7567/SSDM.2003.F-2-6

▲