[F-2-6] Low damage, high selectivity Ar/Cl2/CH4/O2 gate recess etching for AlGaN/GaN HEMT fabrication

Wen-Kai Wang、Yu-Jen Li、Cheng-Kuo Lin、Yi-Jen Chan、Guan-Ting Chen、Jen- Inn Chyi (1.Department of Electrical Engineering, National Central University)

https://doi.org/10.7567/SSDM.2003.F-2-6