Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN

Masanobu Hiroki; Kazuhide Kumakura; Toshiki Makimato; Naoki Kobayashi; Takashi Kobayashi

doi:https://doi.org/10.7567/SSDM.2003.F-3-3

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[F-3-3] Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN

Masanobu Hiroki、Kazuhide Kumakura、Toshiki Makimato、Naoki Kobayashi、Takashi Kobayashi (1.NTT Photonics Laboratories, NTT Corporation、2.NTT Basic Research Laboratories, NTT Corporation、3.Depertment of Applied Physics and Chemistry, University of Electro Communications)

https://doi.org/10.7567/SSDM.2003.F-3-3

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