[F-4-2] InGaN-based horizontal cavity surface emitting laser diode with selectively grown cavity and outer micromirrors

Tetsuya Akasaka、Toshio Nishida、Toshiki Makimoto、Naoki Kobayashi (1.NTT Basic Research Laboratories, NTT Corporation)

https://doi.org/10.7567/SSDM.2003.F-4-2