Low Temperature p-GaN rough layer on In0.23Ga0.77N/GaN MQW LEDs

L. W. Wu; S. J. Chang; Y. K. Su; W. C. Lai; J. K. Sheu

doi:https://doi.org/10.7567/SSDM.2003.F-4-4

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[F-4-4] Low Temperature p-GaN rough layer on In0.23Ga0.77N/GaN MQW LEDs

L. W. Wu, S. J. Chang, Y. K. Su, W. C. Lai, J. K. Sheu (1.Institute of Microelectronics, Department of Electrical Engineering National Cheng Kung University, 2.South Epitaxy Corporation, 3.Optical Science Center, National Central University)

https://doi.org/10.7567/SSDM.2003.F-4-4

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