Low Temperature p-GaN rough layer on In0.23Ga0.77N/GaN MQW LEDs

L. W. Wu; S. J. Chang; Y. K. Su; W. C. Lai; J. K. Sheu

doi:https://doi.org/10.7567/SSDM.2003.F-4-4

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[F-4-4] Low Temperature p-GaN rough layer on In0.23Ga0.77N/GaN MQW LEDs

L. W. Wu、S. J. Chang、Y. K. Su、W. C. Lai、J. K. Sheu (1.Institute of Microelectronics, Department of Electrical Engineering National Cheng Kung University、2.South Epitaxy Corporation、3.Optical Science Center, National Central University)

https://doi.org/10.7567/SSDM.2003.F-4-4

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