Design and Demonstration of High Breakdown Voltage GaN-HEMT using Field Plate Structure for Power Electronics Applications

Wataru Saito; Yoshiharu Takada; Masahiko Kuraguchi; Kunio Tsuda; Ichiro Omura; Tsuneo Ogura

doi:https://doi.org/10.7567/SSDM.2003.G-10-3

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[G-10-3] Design and Demonstration of High Breakdown Voltage GaN-HEMT using Field Plate Structure for Power Electronics Applications

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura (1.Toshiba Corporation, Semiconductor Company and Research & Development Center)

https://doi.org/10.7567/SSDM.2003.G-10-3

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