The Japan Society of Applied Physics

[G-10-3] Design and Demonstration of High Breakdown Voltage GaN-HEMT using Field Plate Structure for Power Electronics Applications

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura (1.Toshiba Corporation, Semiconductor Company and Research & Development Center)

https://doi.org/10.7567/SSDM.2003.G-10-3