A New Protection Circuit of IGBT (Insulated Gate Bipolar Transistor) for Short-Circuit Withstanding Capability

Byung-Chul Jeon; In-Hwan Ji; Min-Koo Han; Yearn-Ik Choi

doi:https://doi.org/10.7567/SSDM.2003.G-2-3

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[G-2-3] A New Protection Circuit of IGBT (Insulated Gate Bipolar Transistor) for Short-Circuit Withstanding Capability

Byung-Chul Jeon, In-Hwan Ji, Min-Koo Han, Yearn-Ik Choi (1.#50, 301-1115, School of Electrical Eng., Seoul Nat’l Univ., 2.School of Electronics Engineering, Ajou University)

https://doi.org/10.7567/SSDM.2003.G-2-3

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