Over 65% Efficiency 300MHz Bandwidth C-Band Internally-Matched GaAs FET

Hiroshi Ohtsuka; Kazutomi Mori; Hidenori Yukawa; Hiroaki Minamide; Yoshinori Kittaka; Toshiyasu Tsunoda; Satoshi Ogura; Tadashi Takagi

doi:https://doi.org/10.7567/SSDM.2003.G-7-1

[G-7-1] Over 65% Efficiency 300MHz Bandwidth C-Band Internally-Matched GaAs FET

Hiroshi Ohtsuka, Kazutomi Mori, Hidenori Yukawa, Hiroaki Minamide, Yoshinori Kittaka, Toshiyasu Tsunoda, Satoshi Ogura, Tadashi Takagi (1.Mitsubishi Electric Corporation, Information Technology R&D Center, 2.Mitsubishi Electric Corporation, High Frequency & Optical Semiconductor Div., 3.Mitsubishi Electric Corporation, Kamakura Works)

https://doi.org/10.7567/SSDM.2003.G-7-1

2003 International Conference on Solid State Devices and Materials

[G-7-1] Over 65% Efficiency 300MHz Bandwidth C-Band Internally-Matched GaAs FET