Base Current Control in Low VBE Operated SiGeC Heterojunction Bipolar Transistors Using SiGe-cap Structure and High Carbon Content Base

Tohru Saitoh; Takahiro Kawashima; Yoshihiko Kanzawa; Junko Sato-Iwanaga; Ken Idota; Takeshi Takagi; Teruhito Ohnishi; Koichiro Yuki; Tsuneichiro Sano; Shigeki Sawada

doi:https://doi.org/10.7567/SSDM.2003.G-8-2

[G-8-2] Base Current Control in Low VBE Operated SiGeC Heterojunction Bipolar Transistors Using SiGe-cap Structure and High Carbon Content Base

Tohru Saitoh、Takahiro Kawashima、Yoshihiko Kanzawa、Junko Sato-Iwanaga、Ken Idota、Takeshi Takagi、Teruhito Ohnishi、Koichiro Yuki、Tsuneichiro Sano、Shigeki Sawada (1.Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd.、2.Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.2003.G-8-2

2003 International Conference on Solid State Devices and Materials

[G-8-2] Base Current Control in Low VBE Operated SiGeC Heterojunction Bipolar Transistors Using SiGe-cap Structure and High Carbon Content Base