[G-8-2] Base Current Control in Low VBE Operated SiGeC Heterojunction Bipolar Transistors Using SiGe-cap Structure and High Carbon Content Base

Tohru Saitoh, Takahiro Kawashima, Yoshihiko Kanzawa, Junko Sato-Iwanaga, Ken Idota, Takeshi Takagi, Teruhito Ohnishi, Koichiro Yuki, Tsuneichiro Sano, Shigeki Sawada (1.Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd., 2.Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.2003.G-8-2