The Japan Society of Applied Physics

[G-9-3] AlGaN/GaN Power HEMTs Using Surface-Charge-Controlled Structure with Recessed Ohmic Technique

Masahito Kanamura, Toshihide Kikkawa, Nobuo Adachi, Tokuharu Kimura, Shigeru Yokogawa, Masaki Nagahara, Naoki Hara, Kazukiyo Joshin (1.Fujitsu Laboratories Ltd., 2.Fujitsu Quantum Devices Ltd.)

https://doi.org/10.7567/SSDM.2003.G-9-3