AlGaN/GaN Power HEMTs Using Surface-Charge-Controlled Structure　with Recessed Ohmic Technique

Masahito Kanamura; Toshihide Kikkawa; Nobuo Adachi; Tokuharu Kimura; Shigeru Yokogawa; Masaki Nagahara; Naoki Hara; Kazukiyo Joshin

doi:https://doi.org/10.7567/SSDM.2003.G-9-3

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[G-9-3] AlGaN/GaN Power HEMTs Using Surface-Charge-Controlled Structure　with Recessed Ohmic Technique

Masahito Kanamura、Toshihide Kikkawa、Nobuo Adachi、Tokuharu Kimura、Shigeru Yokogawa、Masaki Nagahara、Naoki Hara、Kazukiyo Joshin (1.Fujitsu Laboratories Ltd.、2.Fujitsu Quantum Devices Ltd.)

https://doi.org/10.7567/SSDM.2003.G-9-3

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2003 International Conference on Solid State Devices and Materials

[G-9-3] AlGaN/GaN Power HEMTs Using Surface-Charge-Controlled Structure with Recessed Ohmic Technique

[G-9-3] AlGaN/GaN Power HEMTs Using Surface-Charge-Controlled Structure　with Recessed Ohmic Technique