AlGaN/GaN Power HEMTs Using Surface-Charge-Controlled Structure　with Recessed Ohmic Technique

Masahito Kanamura; Toshihide Kikkawa; Nobuo Adachi; Tokuharu Kimura; Shigeru Yokogawa; Masaki Nagahara; Naoki Hara; Kazukiyo Joshin

doi:https://doi.org/10.7567/SSDM.2003.G-9-3

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[G-9-3] AlGaN/GaN Power HEMTs Using Surface-Charge-Controlled Structure　with Recessed Ohmic Technique

Masahito Kanamura, Toshihide Kikkawa, Nobuo Adachi, Tokuharu Kimura, Shigeru Yokogawa, Masaki Nagahara, Naoki Hara, Kazukiyo Joshin (1.Fujitsu Laboratories Ltd., 2.Fujitsu Quantum Devices Ltd.)

https://doi.org/10.7567/SSDM.2003.G-9-3

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2003 International Conference on Solid State Devices and Materials

[G-9-3] AlGaN/GaN Power HEMTs Using Surface-Charge-Controlled Structure with Recessed Ohmic Technique

[G-9-3] AlGaN/GaN Power HEMTs Using Surface-Charge-Controlled Structure　with Recessed Ohmic Technique