The Japan Society of Applied Physics

[P11-2] Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs

Hideki Ono、Satoshi Taniguchi、Toshi-kazu Suzuki (1.Advanced Devices R&D Department, Micro Systems Network Company, Sony Corporation、2.Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology)

https://doi.org/10.7567/SSDM.2003.P11-2