Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs

Hideki Ono; Satoshi Taniguchi; Toshi-kazu Suzuki

doi:https://doi.org/10.7567/SSDM.2003.P11-2

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P11-2] Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs

Hideki Ono、Satoshi Taniguchi、Toshi-kazu Suzuki (1.Advanced Devices R&D Department, Micro Systems Network Company, Sony Corporation、2.Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology)

https://doi.org/10.7567/SSDM.2003.P11-2

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