A New Approach to Gate Dielectric Integrity Based on Differences Between i) Strained and ii) Strain-free Interfacial Regions: Applications to Devices with Alternative High-k Gate Dielectrics

G. Lucovsky; J. C. Phillips; P. Boolchand

doi:https://doi.org/10.7567/SSDM.2003.P2-6

[P2-6] A New Approach to Gate Dielectric Integrity Based on Differences Between i) Strained and ii) Strain-free Interfacial Regions: Applications to Devices with Alternative High-k Gate Dielectrics

G. Lucovsky、J. C. Phillips、P. Boolchand (1.North Carolina State University, Department of Physics、2.Rutgers University、3.Department of Electrical and Computer Engineering, University of Cincinnati)

https://doi.org/10.7567/SSDM.2003.P2-6

2003 International Conference on Solid State Devices and Materials

[P2-6] A New Approach to Gate Dielectric Integrity Based on Differences Between i) Strained and ii) Strain-free Interfacial Regions: Applications to Devices with Alternative High-k Gate Dielectrics