Increase of Crystallization Temperatures of Ultrathin Al2O3 Films Caused by Si Diffusion during Annealing

S. Migita; J.W. Park; T. Yasuda; M. Nishizawa; R. Kuse; T. Nabatame; A. Toriumi

doi:https://doi.org/10.7567/SSDM.2003.P3-11

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P3-11] Increase of Crystallization Temperatures of Ultrathin Al2O3 Films Caused by Si Diffusion during Annealing

S. Migita, J.W. Park, T. Yasuda, M. Nishizawa, R. Kuse, T. Nabatame, A. Toriumi (1.MIRAI-AIST, 2.MIRAI-ASET, AIST Tsukuba, Japan, 3.Department of Materials Science, University of Tokyo)

https://doi.org/10.7567/SSDM.2003.P3-11

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