Interface Oxidation Mechanism in HfO2/Silicon System with Post-Deposition Annealing

Haruka Shimizu; Masashi Sasagawa; Koji Kita; Kentaro Kyuno; Akira Toriumi

doi:https://doi.org/10.7567/SSDM.2003.P3-19

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P3-19] Interface Oxidation Mechanism in HfO2/Silicon System with Post-Deposition Annealing

Haruka Shimizu、Masashi Sasagawa、Koji Kita、Kentaro Kyuno、Akira Toriumi (1.Department of Materials Science, School of Engineering, The University of Tokyo)

https://doi.org/10.7567/SSDM.2003.P3-19

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