Interface Oxidation Mechanism in HfO2/Silicon System with Post-Deposition Annealing

Haruka Shimizu; Masashi Sasagawa; Koji Kita; Kentaro Kyuno; Akira Toriumi

doi:https://doi.org/10.7567/SSDM.2003.P3-19

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P3-19] Interface Oxidation Mechanism in HfO2/Silicon System with Post-Deposition Annealing

Haruka Shimizu, Masashi Sasagawa, Koji Kita, Kentaro Kyuno, Akira Toriumi (1.Department of Materials Science, School of Engineering, The University of Tokyo)

https://doi.org/10.7567/SSDM.2003.P3-19

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