Origin of Interfacial Reaction Constant for Si Thermal Oxidation

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

Toru Akiyama, Hiroyuki Kageshima (1.NTT Basic Research Laboratories, NTT Corporation, 2.Department of Physics Engineering, Mie University)