Atomic Order Flattening of Hydrogen-Terminated Si(110) substrate For Next Generation ULSI Devices

Hiroshi Akahori; Keiichi Nii; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:https://doi.org/10.7567/SSDM.2003.P3-5

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P3-5] Atomic Order Flattening of Hydrogen-Terminated Si(110) substrate For Next Generation ULSI Devices

Hiroshi Akahori、Keiichi Nii、Akinobu Teramoto、Shigetoshi Sugawa、Tadahiro Ohmi (1.New Industry Creation Hatchery Center, Tohoku University、2.Department of Management of Science and Technology Graduate School of Engineering, Tohoku University)

https://doi.org/10.7567/SSDM.2003.P3-5

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