Precursors for chemical vapor deposition of NiSi

Masato ISHIKAWA; Takeshi KADA; Hideaki MACHIDA; Yoshio OHSHITA; Atsushi OGURA

doi:https://doi.org/10.7567/SSDM.2003.P3-7

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P3-7] Precursors for chemical vapor deposition of NiSi

Masato ISHIKAWA, Takeshi KADA, Hideaki MACHIDA, Yoshio OHSHITA, Atsushi OGURA (1.Tri Chemical Laboratories Inc., 2.Toyota Technological Institute, 3.Silicon Systems Res. Labs, NEC Corp.)

https://doi.org/10.7567/SSDM.2003.P3-7

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