Precursors for chemical vapor deposition of NiSi

Masato ISHIKAWA; Takeshi KADA; Hideaki MACHIDA; Yoshio OHSHITA; Atsushi OGURA

doi:https://doi.org/10.7567/SSDM.2003.P3-7

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P3-7] Precursors for chemical vapor deposition of NiSi

Masato ISHIKAWA、Takeshi KADA、Hideaki MACHIDA、Yoshio OHSHITA、Atsushi OGURA (1.Tri Chemical Laboratories Inc.、2.Toyota Technological Institute、3.Silicon Systems Res. Labs, NEC Corp.)

https://doi.org/10.7567/SSDM.2003.P3-7

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