[P4-7] Ultra-shallow Boron Profile Fitting Compensating for Surface Contamination by Utilizing Genetic Algorithms

Masahiro Murakawa、Kentaro Shibahara、Yoshinori Oda、Tetsuya Higuchi、Kenji Nishi (1.MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST)、2.Research Center for Nanodevices and Systems, Hiroshima University、3.Semiconductor Leading Edge Technologies, Inc. (Selete)、4.Kinki Univ. Tech. College)

https://doi.org/10.7567/SSDM.2003.P4-7