Al-doped ZnO Intermediate Layer for AlGaN/GaN HEMT Ohmic Contact

K. Nishizono; M. Okada; M. Kamei; D. Kikuta; J. P. Ao; K. Tominaga; Y. Ohno

doi:https://doi.org/10.7567/SSDM.2003.P5-12

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P5-12] Al-doped ZnO Intermediate Layer for AlGaN/GaN HEMT Ohmic Contact

K. Nishizono, M. Okada, M. Kamei, D. Kikuta, J. P. Ao, K. Tominaga, Y. Ohno (1.Dept. of Electrical and Electronic Engineering, The University of Tokushima, 2.Satellite Venture Business Laboratory, The University of Tokushima)

https://doi.org/10.7567/SSDM.2003.P5-12

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