[P5-12] Al-doped ZnO Intermediate Layer for AlGaN/GaN HEMT Ohmic Contact

K. Nishizono、M. Okada、M. Kamei、D. Kikuta、J. P. Ao、K. Tominaga、Y. Ohno (1.Dept. of Electrical and Electronic Engineering, The University of Tokushima、2.Satellite Venture Business Laboratory, The University of Tokushima)

https://doi.org/10.7567/SSDM.2003.P5-12