Characterization of Threading Dislocation in Si-doped GaN Films by High Spatial Resolution Cathodoluminescence Spectroscopy

Ryuichi Sugie; Masanobu Yoshikawa; Hiroshi Harima

doi:https://doi.org/10.7567/SSDM.2003.P5-9

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P5-9] Characterization of Threading Dislocation in Si-doped GaN Films by High Spatial Resolution Cathodoluminescence Spectroscopy

Ryuichi Sugie, Masanobu Yoshikawa, Hiroshi Harima (1.Toray Research Center Inc., 2.Department of Electronics and Information Science, Kyoto Institute of Technology)

https://doi.org/10.7567/SSDM.2003.P5-9

▲