Characterization of Threading Dislocation in Si-doped GaN Films by High Spatial Resolution Cathodoluminescence Spectroscopy

Ryuichi Sugie; Masanobu Yoshikawa; Hiroshi Harima

doi:https://doi.org/10.7567/SSDM.2003.P5-9

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P5-9] Characterization of Threading Dislocation in Si-doped GaN Films by High Spatial Resolution Cathodoluminescence Spectroscopy

Ryuichi Sugie、Masanobu Yoshikawa、Hiroshi Harima (1.Toray Research Center Inc.、2.Department of Electronics and Information Science, Kyoto Institute of Technology)

https://doi.org/10.7567/SSDM.2003.P5-9

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