[P6-14] The Characteristic of InGaN/GaN Multiple-Quantum-Well Metal-Insulator-Semiconductor Photodiodes Using SiO2 Fabricated by Photochemical Vapor Deposition

P. C. Chang、C. H. Chen、S. J. Chang、Y. K. Su、P. C. Chen、Y. D. Jhou、Hung Hung、S. L. Wu、K. C. Huang (1.Institute of Microelectronics and Department of Electrical Engineering National Cheng Kung University、2.Department 0f Electronic Engineering, Cheng-Shiu Institute of Technology)

https://doi.org/10.7567/SSDM.2003.P6-14