A surface-potential-based cylindrical surrounding-gate MOSFET model

Shuhei Amakawa; Kazuo Nakazato; Hiroshi Mizuta

doi:https://doi.org/10.7567/SSDM.2003.P9-10L

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[P9-10L] A surface-potential-based cylindrical surrounding-gate MOSFET model

Shuhei Amakawa、Kazuo Nakazato、Hiroshi Mizuta (1.Microelectronics Research Centre, Cavendish Laboratory、2.Hitachi Cambridge Laboratory, Cavendish Laboratory)

https://doi.org/10.7567/SSDM.2003.P9-10L

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