A Large-Signal MOSFET Model Based on Transient Carrier Response for RF Circuits

Kazufumi Watanabe; Koji Kotani; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:https://doi.org/10.7567/SSDM.2004.A-10-2

[A-10-2] A Large-Signal MOSFET Model Based on Transient Carrier Response for RF Circuits

Kazufumi Watanabe、Koji Kotani、Akinobu Teramoto、Shigetoshi Sugawa、Tadahiro Ohmi (1.Graduate School of Engineering, Tohoku University、2.New Industry Creation Hatchery Center, Tohoku University)

https://doi.org/10.7567/SSDM.2004.A-10-2

2004 International Conference on Solid State Devices and Materials

[A-10-2] A Large-Signal MOSFET Model Based on Transient Carrier Response for RF Circuits