Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlOx-Limited Inversion Layer Mobility in n+poly-Si/HfAlOx/SiO2 n-MOSFETs

[A-2-2] Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlOx-Limited Inversion Layer Mobility in n+poly-Si/HfAlOx/SiO2 n-MOSFETs

N. Yasuda, H. Hisamatsu, H. Ota, A. Toriumi (1.MIRAI-ASET, 2.MIRAI-ASRC, 3.Department of Materials Science, The University of Tokyo)