[A-8-4] In-Plane Anisotropy of MOS Inversion Layer Mobility on Silicon (100), (110) and (111) surfaces

H. Irie、K. Kita、K. Kyuno、A. Toriumi (1.Department of Materials Science, School of Engineering, The University of Tokyo)

https://doi.org/10.7567/SSDM.2004.A-8-4