[A-9-3] Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides
Takamitsu Ishihara, Junji Koga, Shin-ichi Takagi
(1.Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation, 2.Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo)
https://doi.org/10.7567/SSDM.2004.A-9-3