Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides

Takamitsu Ishihara; Junji Koga; Shin-ichi Takagi

doi:https://doi.org/10.7567/SSDM.2004.A-9-3

[A-9-3] Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides

Takamitsu Ishihara、Junji Koga、Shin-ichi Takagi (1.Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation、2.Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo)

https://doi.org/10.7567/SSDM.2004.A-9-3

2004 International Conference on Solid State Devices and Materials

[A-9-3] Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides