Electron Mobility Degradation Mechanisms in HfSiON MISFETs under the Real Operating Condition

Ryosuke Iijima; Mariko Takayanagi; Takamitsu Ishihara; Takeshi Yamaguchi; Akira Nishiyama

doi:https://doi.org/10.7567/SSDM.2004.B-1-2

[B-1-2] Electron Mobility Degradation Mechanisms in HfSiON MISFETs under the Real Operating Condition

Ryosuke Iijima、Mariko Takayanagi、Takamitsu Ishihara、Takeshi Yamaguchi、Akira Nishiyama (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation、2.SoC Research & Development Center, Toshiba Corporation Semiconductor Company)

https://doi.org/10.7567/SSDM.2004.B-1-2

2004 International Conference on Solid State Devices and Materials

[B-1-2] Electron Mobility Degradation Mechanisms in HfSiON MISFETs under the Real Operating Condition