[B-1-3] Nitrogen profile engineering in the interfacial SiON for HfAlOx gate dielectric

Riichiro Mitsuhashi, Kazuyoshi Torii, Hiroshi Ohji, Takaaki Kawahara, Atsushi Horiuchi, Hitoshi Takada, Masashi Takahashi, Hiroshi Kitajima (1.Semiconductor Leading Edge Technologies)

https://doi.org/10.7567/SSDM.2004.B-1-3