[B-1-3] Nitrogen profile engineering in the interfacial SiON for HfAlOx gate dielectric

Riichiro Mitsuhashi、Kazuyoshi Torii、Hiroshi Ohji、Takaaki Kawahara、Atsushi Horiuchi、Hitoshi Takada、Masashi Takahashi、Hiroshi Kitajima (1.Semiconductor Leading Edge Technologies)

https://doi.org/10.7567/SSDM.2004.B-1-3