[B-2-3] Etch-byproduct Pore Sealing for ALD -TaN Deposition on Porous Low-k Film

Akira Furuya、Eiichi Soda、Hiroshi Okamura、Nobuyuki Ohtsuka、Miyoko Shimada、Naofumi Ohashi、Shinichi Ogawa (1.Semiconductor Leading Edge Technologies Inc. (Selete))

https://doi.org/10.7567/SSDM.2004.B-2-3