Etch-byproduct Pore Sealing for ALD -TaN Deposition on Porous Low-k Film

Akira Furuya; Eiichi Soda; Hiroshi Okamura; Nobuyuki Ohtsuka; Miyoko Shimada; Naofumi Ohashi; Shinichi Ogawa

doi:https://doi.org/10.7567/SSDM.2004.B-2-3

2004 International Conference on Solid State Devices and Materials

Sep 14, 2004 - Sep 17, 2004
Tower Hall Funabori, Tokyo, Japan

[B-2-3] Etch-byproduct Pore Sealing for ALD -TaN Deposition on Porous Low-k Film

Akira Furuya, Eiichi Soda, Hiroshi Okamura, Nobuyuki Ohtsuka, Miyoko Shimada, Naofumi Ohashi, Shinichi Ogawa (1.Semiconductor Leading Edge Technologies Inc. (Selete))

https://doi.org/10.7567/SSDM.2004.B-2-3

▲