[B-3-3] Germanium-induced Modulation of Work Function and Impurity Segregation Effect in Fully-Ni-germanosilicide (Ni(Si1-xGex)) Gate

Yoshinori Tsuchiya, Atsuhiro Kinoshita, Junji Koga (1.Advanced LSI Technology Laboratory, Toshiba Corp.)

https://doi.org/10.7567/SSDM.2004.B-3-3