[B-5-1] Material Selection for the Metal Gate/High-k Transistors

Y. Akasaka、K. Miyagawa、A. Kariya、H. Shoji、T. Aoyama、S. Kume、M. Shigeta、O. Ogawa、K. Shiraishi、A. Uedono、K. Yamabe、T. Chikyow、K. Nakajima、M. Yasuhira、K. Yamada、T. Arikado (1.Semiconductor Leading Edge Technologies, Inc. (Selete)、2.Tsukuba University、3.National Research Institute of Material Science、4.Waseda University)

https://doi.org/10.7567/SSDM.2004.B-5-1